QM3007K p-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage -30 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ -10v 1 -3.2 a i d @t a =70 continuous drain current, v gs @ -10v 1 -2.5 a i dm pulsed drain current 2 -13 a p d @t a =25 total power dissipation 3 1 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 125 /w r jc thermal resistance junction-case 1 --- 80 /w bvdss rdson id -30v 70m ? -3.2a the QM3007K is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the small power switching and load switch applications. the QM3007K meet the rohs and green product requirement with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sot23 pin configuration product summery g s d product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =-1ma --- -0.02 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-10v , i d =-3a --- 55 70 m v gs =-4.5v , i d =-1.5a --- 90 120 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.0 -1.5 -2.5 v v gs(th) v gs(th) temperature coefficient --- 4.32 --- mv/ i dss drain-source leakage current v ds =-24v , v gs =0v , t j =25 --- --- -1 ua v ds =-24v , v gs =0v , t j =55 --- --- -5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-3a --- 4.8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 24 48 q g total gate charge (-4.5v) v ds =-20v , v gs =-4.5v , i d =-3a --- 5.22 7.3 nc q gs gate-source charge --- 1.25 1.8 q gd gate-drain charge --- 2.3 3.2 t d(on) turn-on delay time v dd =-15v , v gs =-10v , r g =3.3 i d =-1a --- 18.4 37 ns t r rise time --- 11.4 21 t d(off) turn-off delay time --- 39.4 79 t f fall time --- 5.2 10.4 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 463 650 pf c oss output capacitance --- 82 115 c rss reverse transfer capacitance --- 68 95 symbol parameter conditions min. typ. max. unit i s continuous source current 1,4 v g =v d =0v , force current --- --- -3.2 a i sm pulsed source current 2,4 --- --- -13 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics product specification QM3007K p-ch 30v fast switching mosfets sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
